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Atomic process of oxidative etching in monolayer molybdenum disulfide
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  • 分类：TN305.7[电子电信—物理电子学] TQ136.12[化学工程—无机化工]
  • 作者机构：[1]State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhefiang University, Hangzhou 310027, China, [2]College of Electronic Engineering, South China Agricultural University, Cuangzhou 510642, China, [3]Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA
  • 相关基金：This work was supported by the National Basic Research Pro- gram of China （2014CB932500, 2015CB921004）, the National Nat- ural Science Foundation of China （51472215, 51222202, 61571197 and 61172011） and the 111 project （B16042）. This work made use of the resources of the Center of Electron Microscopy, Zhejiang University.
作者： Danhui Lv[1], Hulian Wang[1], Dancheng Zhu[1], Jie Lin[1], Guoli Yin[1,3], Fang Lin[2], Ze Zhang[1], ChuanhongJin[1]
关键词： 二硫化钼, 氧化腐蚀, 原子过程, 刻蚀, 透射电子显微镜, TEM分析, 过渡金属硫化物, 单层, Molybdenum disulfideOxidative etchingTransmission electron microscopyAtomic process
中文摘要：

Corresponding author. E-mail address： chhjinOzju.edu.cn （C. Jin）.

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