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Control of residual carbon concentration in GaN high electron mobility transistor and realization of
  • ISSN号：0040-6090
  • 期刊名称：Thin Solid Films
  • 时间：2014.8.1
  • 页码：135-139
  • 相关项目：富In条件下生长模式对AlInN晶体质量与光电性质的影响
作者： S.M. Zhang|J.J. Zhu|H. Wang|H. Yang|
同期刊论文项目
富In条件下生长模式对AlInN晶体质量与光电性质的影响
期刊论文 38 会议论文 2
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