中文摘要：

通过求解修正的基于k.p方法的有效质量哈密顿方程并与泊松方程进行自洽,得到在极化效应影响下的不同阱宽和垒厚的InGaN/GaN多量子阱导带和价带的能带结构,并计算了不同多量子阱结构的自发辐射谱。仿真结果表明：阱宽和垒厚对InGaN/GaN多量子阱结构的光电子学特性有很大的影响。随着阱宽和垒厚的增加,InGaN/GaN多量子阱结构的辐射峰值波长出现一定程度的红移,辐射强度也有所降低。极化效应产生的极化电场能够减小InGaN/GaN多量子阱结构导带和价带间的带隙宽度,并使电子和空穴的分布产生空间分离。与不考虑极化效应的结果对比得出,在极化效应的影响下,InGaN/GaN多量子阱结构的光电子学特性对阱宽和垒厚的依赖性增强。

英文摘要：

The band structure and spontaneous emission spectra of the InGaN/GaN multiple quantum well structures with different well width and barrier thickness were systematically analyzed by using a detailed theoretical model based on the k·p theory.The spontaneous emission spectra of different quantum well structures were calculated.Numerical results show that the well width and barrier thickness have a great influence on the electronic and optical properties of InGaN/GaN multiple quantum well structures.With the increase of well width and barrier thickness,the emission peak wavelength shows red shift and emission intensity reduces for the InGaN/GaN multiple quantum well structures.Polarization-induced electrostatic fields in InGaN/GaN multiple quantum well structures decrease the band gap and separate the distribution of electron and hole.Furthermore,the polarization enhances the influence of well width and barrier thickness on the optoelectronic properties of InGaN/GaN multiple quantum well structures.