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Spectral Properties of Fabry-Perot Laser Diodes and Conventional Semiconductor Optical Amplifiers

ISSN号：1005-8885
期刊名称：《中国邮电高校学报：英文版》
时间：0
分类：TN929.11[电子电信—通信与信息系统;电子电信—信息与通信工程]
作者机构：[1]Key Laboratory of All Optical and Advanced Telecommunication Networks, Beijing Jiaotong University, Beijing 100044, P.R. China, [2]Department of Chemical and Engineering Physics, University of Wisconsin-PlatteviUe, Platteville 53818, WI, USA, [3]Department of Electrical and Computer Engineering, McMaster University, Hamilton I..8S 4K1, Ontario, Canada
相关基金：This work is supported by the Science and Technology Foundation of Beijing Jisotong University （2005SZ004） ; National Natural Science Foundation of China （60577021, 60437010）.

作者： CHEN Gen-xiang[1], LI Wei[2], XU Cheng-lin[3], HUANG Wei-ping[3], JIAN Shui-sheng[1]

关键词：半导体光学放大器, 激光二极管, 行波模型, 光学材料, 光通信, semiconductor optical amplifier , laser diode , amplified spontaneous emission , traveling-wave model

中文摘要：

这篇论文为分析论述一个统一全面模型光谱 Fabry-Perot 激光二极管和常规半导体的性质光放大器。我们由考虑宽带放大了自发的排放地开发模型，茶碱把光信号地放在一个一般框架。明确地，这篇论文在细节讨论模型的理论方面，它在材料获得和自发的排放的系列之上被基于力量，非线性的获得抑制，并且纵的空间洞烧。这篇论文也为常规半导体的盒子论述模型的模拟结果光放大器和 Fabry-Perot 的盒子表明它的能力的激光二极管。

英文摘要：

This paper presents an unified comprehensive model for the analysis of the spectral properties of Fabry-Perot laser diodes and conventional semiconductor optical amplifiers. We develop the model by considering the wide-band amplified spontaneous emission fields and the input optical signal fields in a general frame. Specifically, this paper discusses theoretical aspects of the model in details, which are based upon the spectra of material gain and spontaneous emission power, nonlinear gain suppression, and longitudinal spatial hole burning. This paper also presents simulation results of the model for the case of conventional semiconductor optical amplifier and the case of Fabry-Perot laser diode to demonstrate its capabilities.

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