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Effect of the Al0.3Ga0.7As interlayer thickness upon the quality of GaAs on a Ge substrate grown by
  • ISSN号：0734-211X
  • 期刊名称：Journal of Vacuum Science and Technology B: Microe
  • 时间：2013
  • 页码：041202-041202
  • 相关项目：Si衬底上InGaP/GaAs/Ge和InGaP/GaAs/SiSnGe/Ge多结太阳能电池材料生长与器件制备研究
作者： Senlin Li|Qingqing Chen|Jin Zhang|Huiquan Chen|Wei Xu|Hui Xiong|Zhihao Wu|YanYan Fang|Changqing Chen|
同期刊论文项目
Si衬底上InGaP/GaAs/Ge和InGaP/GaAs/SiSnGe/Ge多结太阳能电池材料生长与器件制备研究
期刊论文 11 专利 7
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