利用THz时域光谱技术对MgF2晶体(样品1)和MgF2:Co晶体(样品2)在0.5-2.5THz的吸收特性进行了研究.在0.5—2.5THz波段,样品1吸收系数α(v)随频率v增加而增大,最大值为24cm^-1.样品2的吸收系数比样品1大得多,Co掺杂使晶格吸收带边向低频移动,而且样品2在1.9THz有吸收峰,吸收系数达到70cm^-1,由此求出F^-Co^2+离子键伸缩振动的键力常数K为3.40×10^-2N/cm.这一结果表明,THz光谱分析有可能成为研究晶体化学键的一种重要手段. 利用光学常数之间的关系计算了两个样品在0.5-2.5THz的介电函数的实部ε1(v),得到样品1的ε1(v)值在4.67至4.73之间,样品2的ε1(v)值在4.62至5.01之间.
THz (terabertz) properties of MgF2 crystal (sample 1) and MgF2: Co crystal (sample 2) is measured using transmission THz time domain spectroscopy in the frequency range between 0.5 and 2.5 THz. The absorption coefficients α (v) of sample 1 increases and has a maximum 24cm^-1 with increasing frequency v from 0.5 THz to 2.5 THz. The absorption coefficient of sample 2 is much larger than that of the sample 1, and its absorption band edge of the crystal lattice shifts to lower frequency side because of the dopant Co. Moreover, there is an absorption peak at 1.9THz and the absorption coefficient is greater than 70 cm^- 1 , the force constant K of F^- -Co^2 + ionic chemical bond stretch vibration calculated from this peak is 3.40 × 10^- 2 N/cm. The THz spectroscopy can be an important technique for research of chemical bond in crystal. Real dielectric functions between 0.5 and 2.5 THz of the two samples are calculated by relations between optical constants. The ε1 (v) of sample 1 varies from 4.67 to 4.73 and ε1 (v) of sample 2 varies from 4.62 to 5.01.