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The growth and properties of m-plane InN epilayer on LiAlO2(100) by metal-organic chemical vapor dep
  • ISSN号：1674-7348
  • 期刊名称：Science China Physics,Mechanics & Astonomy
  • 时间：2012.7.7
  • 页码：1249-1252
  • 相关项目：宽禁带半导体极化诱导能带调控原理及器件应用
作者： Zheng Youdou|Zhang Rong|Fu DeYi|Liu Bin|Xiu Xiangqian|Hua Xuemei|Zhao Hong|Chen Peng|Shi Yi|
同期刊论文项目
宽禁带半导体极化诱导能带调控原理及器件应用
期刊论文 95 会议论文 29 专利 6
同项目期刊论文
Study of Rashba spin splitting and intersubband spin-orbit coupling effect in AlGaN/GaN quantum well
Electrothermally driven current vortices in inhomogeneous bipolar semiconductors
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO(2)(100)
Gallium Nitride Nanowires Grown by Hydride Vapor Phase Epitaxy
GaN电感耦合等离子体刻蚀的优化和损伤分析
Si(111)衬底上HVPE GaN厚膜生长
InGaN/GaN薄膜的阴极荧光研究
LPCVD法在GaN上生长Ge薄膜及其特性(英文)
红橙光InGaN/GaN量子阱的结构与光学性质研究
Surface morphology and composition studies in InGaN/GaN film grown by MOCVD
Magnetic and electrical properties of ε-Fe3N on c-plane GaN
GaN纳米柱的量子效率研究
氢化物气相外延生长的GaN膜中的应力分析
Fe/GaN、Fe_3N/GaN的生长及其性能研究
Effects of V/III ratio on the growth of a-plane GaN films
Ultraviolet emission efficiencies of Al(x)Ga(1-x)N films pseudomorphically grown on Al(y)Ga(1-y)N te
Electrothermal Dynamics of Semiconductor Nanowires under Local Carrier Modulation
Influence of biaxial strain on near-band-edge optical properties of c- and a-plane wurtzite-InN film
Growth and Properties of Blue and Amber Complex Light Emitting InGaN/GaN Multi-Quantum Wells
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Structural properties of GaN(0001) epitaxial layers revealed by high resolution X-ray diffraction
Simulation of growing GaN in vertical HVPE reactor
Rashba spin splitting for the first two subbands in AlxGa1-xN/GaN heterostructures
Ferromagnetic Fe3N filmsgrownon GaN(0002) substrates by MOCVD
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Rapid Thermal Annealing Characteristics of Mg Doped InN by X-Ray Diffraction
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Effectr of the V/III ratio during buffer layer growth on the yellow and blue luminescence in undoped
Temperature dependence of the point defect properties of GaN thin films studied by terahertz time do
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Large-scale fabrication and luminescence properties of GaN nanostructures by a soft UV-curing nanoim
Investigation of surface plasmon coupling with the quantum well for reducing efficiency droop in GaN
A Band-Gap Energy Model of the Quaternary Alloy In_xGa_yAl_(1-x-y)N using Modified Simplified Cohere
Mosaic structure in epitaxial GaN film varying with thickness
study on the photolumminescence properties of InN films
Roles of V/III ratio and mixture degree in GaN growth CFD and MD simulation study
Strain in GaN Epi-Layer Grown by Hydride Vapor Phase Epitaxy,
Study of GaN nano-pillars with Nickel nano-islands mask
纳米压印技术在LED器件制备中的应用
新型电极材料石墨烯在LED中的应用
Fe/GaN、Fe3N/GaN的生长及其性能研究
厚度对GaN薄膜的发光性能的影响
Biaxial and uniaxial strain effects on the ultraviolet emission efficiencies of AlxGa1−xN film
Growth of In‐rich and Ga‐rich InGaN alloys by MOCVD and fabrication of InGaN‐based photoelectrodes
A model for thermal annealing on forming In-N clusters in InGaNP
Effect of Rapid Thermal Annealing on the Formation of In-N Clusters in Strained InGaNAs
Composition pulling effect and strain relief mechanism in AlGaN/AlN distributed Bragg reflectors
AlxGa1-xN及掺Mg Al0.54Ga0.46N的阴极荧光特性
Impact of anisotropic strains on low-frequency dielectric properties and room-temperature polar phas
The Research on GaN Based Multiple Quantum Well LEDs withNanopillar Arrays for EnhancingLight-emitti
A modified simplified coherent potential approximation model of band gap energy of III-V ternary all
Identifying Interface States in AlInN/GaN Heterostructure by Photocurrent Method
Arrays of GaN nano-pillars fabricated by nickel nano-island mask
Optical and Structural Properties of Cr-Doped GaN Grown by HVPE Method
Design and fabrication of SiO2/Si3N4 dielectric distributed Bragg reflectors for ultraviolet optoele
The Formation and Characterization of GaN Hexagonal Pyramids
The LiNbO3 thin films deposited on the Al0.28Ga0.72N/GaN substrate
Simulation of a new style vertical HVPE system
Gate voltage and structure parameter modulated spin splitting in AlGaN/GaN quantum wells
MOCVD生长的InGaN/GaN薄膜发光特性研究
Raman Scattering Study of InxGa1-xN Alloys with Low Indium Compositions
利用X射线衍射研究Mg掺杂的InN的快速退火特性
GaN纳米柱发光特性
GaN薄膜中的马赛克结构随厚度发生的变化
InN的光致发光特性研究
氢化物气相外延生长高质量GaN膜生长参数优化研究
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氢化物气相外延生长GaN膜性质研究
背势垒对InAlN/GaN异质结构中二维电子气的影响
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阳极氧化法制备氧化铝纳米线
LPCVD法在GaN上生长Ge薄膜及其特性
AlGaN/GaN量子阱中子带的Rashba自旋劈裂和子带间自旋轨道耦合作用研究
利用Ni纳米岛模板制备半极性晶面GaN纳米柱
宽带隙半导体材料光电性能的测试
深能级对白光LED的电致发光和I-V特性的影响
Effects of V/III ratio on the growth of a-plane GaN films
GaN hexagonal pyramids formed by a photo-assisted chemical etching method
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