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中文摘要：
采用金属有机物化学气相淀积方法在铝酸锂LiAlO2衬底上外延生长m面GaN薄膜.X射线衍射测量的结果表明所得薄膜具有较理想的m面晶体取向,并对其各向异性的应变进行了计算,摇摆曲线的测量发现样品存在明显的面内结构各向异性.采用偏振光致发光研究材料的面内光学各向异性,发现随着偏振角度的改变,发光峰的峰位和强度均有明显变化,并用对称性破缺导致价带子带劈裂的理论对结果进行了解释.
英文摘要：
The m-plane GaN film is grown on LiAlO2 by metal organic chemical vapor deposition.The single crystal orientation of m-plane GaN is demonstrated,According to the X-ray diffraction results,and the anisotropy strain is calculated.X-ray rocking curve at different φ angle shows obvious in plane structural anisotropy.Polarized photoluminescence is employed for the investigation of optical anisotropy.Both the wavelength and the intensity for the emission peak near band edge vary with the rotation of polarization angle,and can be explained by the degeneration of the subbands in valence band under anisotropy strain.
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