中文摘要：

根据pn结太阳电池的电流-电压方程,计算了在理想情况下,InGaN材料应用于单结、双结和三结太阳电池时,其转换效率可分别高达27.3%,36.6%和41.3%,均高于通常半导体材料太阳电池.同时,计算还得出了3种InGaN太阳电池的最佳带隙宽度及相应的In组分,为设计InGaN太阳电池提供了理论依据.

英文摘要：

Based on the current-voltage equation for pn junction solar cells, the conversion efficiency under ideal conditions for an InGaN solar cell was calculated. The conversion efficiencies of one-junction, two-junction, and three-junction Inx Ga1 - x N solar cells were calculated to 27.3% ,36. 6% ,and 41.3% ,respectively,all of which are higher than those of common materials. The optimal band gaps and the indium contents of these InxGa1-x N solar cells were also obtained, giving a theoretical basis for the design of Inx Ga1-x N solar cells.