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The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition
  • ISSN号：1674-1056
  • 期刊名称：Chinese Physics B
  • 时间：2011.12.12
  • 页码：127306-1273064
  • 相关项目：紫外-红外双色探测材料和器件新原理研究
作者： Yang, Hui|Zhao, De-Gang|Wu, Liang-Liang|Deng, Yi|Jiang, De-Sheng|Zhu, Jian-Jun|Liu, Zong-Shun|Wang, Hui|Zhang, Shu-Ming|
同期刊论文项目
紫外-红外双色探测材料和器件新原理研究
期刊论文 55
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Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN
Influence of different annealing temperature and atmosphere on the Ni/Au Ohmic contact to p-GaN
Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor de
A High Power InGaN-Based Blue-Violet Laser Diode Array with a Broad-Area Stripe
Tunable Surface Electron Spin Splitting with Electric Double-Layer Transistors Based on InN
Effect of polarization on intersubband transition in AlGaN/GaN multiple quantum wells
High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy
Temperature-controlled epitaxy of InxGa1-xN alloys and their band gap bowing
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Ionic liquid gated electric-double-layer transistors based on Mg-doped InN epitaxial films
Surface states of InAlN film grown by MOCVD
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Fabrication of GaN nanodots via GaN thermal decomposition in H2 atmosphere
Effects of Al 0.3 Ga 0.7 As interlayer with pulsed atomic layer epitaxy on heterogeneous integration
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Strong enhancement of terahertz response in GaAs/AlGaAs quantum well photodetector by magnetic field
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Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer
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Effect of light Si-doping on the near-band-edge emissions in high quality GaN
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The effects of InGaN layer thickness on the performance of InGaN/GaN p-i-n solar cells
Distribution of electric field and design of devices in GaN avalanche photodiodes
Properties of Si Doped Al0.4Ga0.6N Epilayers with Different AlGaN Window Layer Grown on High Quality
The Effects of a Low-Temperature GaN Interlayer on the Performance of InGaN/GaN Solar Cells
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透射式金属光栅耦合SPR传感器
期刊信息
  • 《中国物理B：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京 中关村 中国科学院物理研究所内
  • 邮编：100080
  • 邮箱：
  • 电话：010-82649026 82649519
  • 国际标准刊号：ISSN：1674-1056
  • 国内统一刊号：ISSN：11-5639/O4
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 被引量:406