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Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical inves
  • ISSN号：2045-2322
  • 期刊名称：Scientific Reports
  • 时间：2014.10.6
  • 页码：6521-
  • 相关项目：III族氮化物半导体异质结构中的自旋轨道耦合效应及其调控
作者： Wang, Weiying|Jin, Peng|Chen, Yonghai|Shen, Bo|
同期刊论文项目
III族氮化物半导体异质结构中的自旋轨道耦合效应及其调控
期刊论文 29 会议论文 9
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