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中文摘要：
通过射频磁控溅射技术在Si（111）衬底上制备了未掺杂和La、Nd掺杂ZnO薄膜。xRD分析表明，ZnO薄膜具有C轴择优生长，La、Nd掺杂ZnO薄膜为纳米多晶薄膜。AFM观测，La、Nd掺杂ZnO薄膜表面形貌较为粗糙。从薄膜的室温光致光谱中看到，所有薄膜都出现了395nm的强紫光峰和495nm的弱绿光峰，La掺杂ZnO薄膜的峰强度增大，Nd掺杂ZnO薄膜的峰强度减弱，分析了掺杂引起PL峰强度变化的原因。
英文摘要：
The ZnO thin film and rare earth （La, Nd） doped ZnO thin films were deposited on Si（111） substrate by RF magnetron sputtering. The X-ray Diffraction （XRD） analysis revealed that ZnO thin film was highly c-axis orientation and RE-doped ZnO thin films were nano-multi-crystal departure from normal growth. The roUghness surface figures of the films were observed by Atomic Force Microscopy （AFM）. The room temperature Photoluminescence （PL） spectrum indicates that the thin films have strong purple peak at 395 nm and weak green peak at 495 nm. The PL spectrum peak intensity of Re-doped ZnO thin films is different. The results indicate that the peak of Nd-doped ZnO thin films is weakened and that of La-doped ZnO thin films is strengthened, and the causes of PL peak intensity changes are analyzed.
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