Wavelength-tunable infrared light emitting diode based on ordered ZnO nanowire/Si1-xGex alloy heterojunction
ISSN号:0023-074X
期刊名称:《科学通报》
时间:0
分类:TN256[电子电信—物理电子学] TN36[电子电信—物理电子学]
作者机构:[1]Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China, [2]Institute of Microelectronics, Tsinghua University, Beijing 100084, China
相关基金:The authors are grateful for the support from the "Thousands Talents" Program for Pioneer Researchers and Their Innovation Teams, China; the President's Funding of the Chinese Academy of Sciences; the National Natural Science Foundation of China (Nos. 51272238, 21321062, 51432005 and 61405040); the Innovation Talent Project of Henan Province (No. 13HASTIT020); the Talent Project of Zhengzhou University (No. ZDGD13001) and the Surface Engineering Key Lab of LIPCAST; the Tsinghua University Initiative Scientific Research Program, the National Natural Science Foundation of China (No. 61306105).