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In-situ wafer bowing measurements of GaN grown on Si (111) substrate by reflectivity mapping in meta
  • ISSN号：1674-1056
  • 期刊名称：Chinese Physics B
  • 时间：2015.9
  • 页码：-
  • 相关项目：常关型宽禁带氮化镓MOS场效应晶体管的研究
作者： Qiu Yun-Ling|Wu Zhi-Sheng|Liu Yang|Zhang Bai-Jun|
同期刊论文项目
常关型宽禁带氮化镓MOS场效应晶体管的研究
期刊论文 31 专利 7
同项目期刊论文
Si衬底AlGaN/GaN功率开关场效应晶体管研制
Influences of periodic Si delta-doping on the characteristics of n-GaN grown on Si (111) substrate
Effect of compositionally graded AlGaN buffer layer grown by different functions of trimethylaluminu
Electrical properties of MOCVD grown GaN on Si (111) substrate with low-temperature AlN interlayers
Comparison of Two Types of Recessed-Gate Normally-Off AlGaN/GaN Heterostructure Field Effect Transis
Si and Mg pair-doped interlayers for improving performance of AlGaN/GaN heterostructure field effect
GaN nanowire fabricated by selective wet-etching of GaN micro truncated-pyramid
Investigations of leakage current properties in semi-insulating GaN grown on Si(111) substrate with
Vertical-conducting InGaN/GaN multiple quantum wells LEDs with AlN/GaN distributed Bragg reflectors
Improving the Quality of GaN on Si(111) Substrate with a Medium-Temperature/High-Temperature Bilayer
场板结构对AlGaN/GaN HFET电场分布的影响
Investigations of Leakage Current Properties in Semi-insulating GaN Grown on Si (111) Substrate with
Migrationcharacterization of Ga and In adatoms on dielectric surface in selective MOVPE
Enhancement of GaN-Based Light-Emitting Diodes Transferred From Si (111) Substrate Onto Electroplati
表面态对AlGaN/GaN异质结构2DEG影响的模拟分析
A review of GaN-based optoelectronic devices on silicon substrate
The influences of AlN/GaN superlattices buffer on the characteristics of AlGaN/GaN-on-Si (111) templ
增强型GaN MOSFET的制备及其绝缘栅的电荷特性研究
The suppression of background doping in selective area growth technique for high performance normall
Influence of the carbon-doping location on the material and electrical properties of a AlGaN/GaN het
具有逆向导通能力的GaN功率开关器件
Current transport mechanism of AlGaN/GaN Schottky barrier diode with fully recessed Schottky anode
Effect of AlN/GaN superlattice buffer on the strain state in GaN-on-Si(111) system
Si衬底AlGaN/GaN 功率开关场效应晶体管的研制
Normally-off GaN recessed-gate MOSFET fabricated by selective area growth technique
Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode
选择区域外延槽栅结构GaN常关型MOSFET的研究
第三代半导体GaN功率开关器件的发展现状及面临的挑战
期刊信息
  • 《中国物理B：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京 中关村 中国科学院物理研究所内
  • 邮编：100080
  • 邮箱：
  • 电话：010-82649026 82649519
  • 国际标准刊号：ISSN：1674-1056
  • 国内统一刊号：ISSN：11-5639/O4
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 被引量:406