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低噪声X波段再生式分频组件研究
  • ISSN号：1000-3819
  • 期刊名称：固体电子学研究与进展
  • 时间：0
  • 页码：15-22
  • 语言：中文
  • 分类：TN77[电子电信—电路与系统]
  • 作者机构：[1]东南大学毫米波国家重点实验室,南京210096
  • 相关基金：基金项目：国家自然科学基金委创新基金资助（60621002）
  • 相关项目：电磁场与微波技术
作者： 孙忠良|齐宁华|徐欧|杨非|
关键词： 低噪声, X波段, 再生式分频, 锗硅放大器, low noise, X-band, regenerative frequency divider, SiGe amplifier
中文摘要：

采用低噪声再生式分频技术,设计了低噪声X波段再生式分频组件。首先研究讨论了再生式分频的噪声理论,分析了有源器件对于近载波噪声和远载波噪声性能的影响。接着设计制作了两级锗硅HBT放大器、混频器、微带结构带通、带阻滤波器和功率分配器,其中低1/f锗硅HBT放大器首次应用于低噪声再生式分频器的设计。最后对分频组件进行了测试,测试结果良好,在近载波相位噪声性能改善6dB;在远载波白噪声段,噪声小于-165dBc/Hz。测试结果与理论计算结果吻合良好,达到了低噪声的设计要求。

英文摘要：

The X-band regenerative divider is designed with the regenerative frequency dividing technique.Firstly,the noise theory is discussed,including the component s influence to the noise performance at the near-carrier and far-carrier frequency band.Then,two-stage SiGe amplifier,mixer,band-pass filter,band-stop filter and power divider are designed and fabricated.SiGe amplifier with low 1/f performance is the first time to be used in the design of regenerative divider.After measurement,the phase noise at the near-carrier frequency band is decreased about 6 dB, the noise at the far-carrier frequency band is lower than -165 dBc/Hz. Both agree well with the theory, and the design achieves the low noise requirement.

同期刊论文项目
电磁场与微波技术
期刊论文 342 会议论文 179 获奖 13 专利 23 著作 2
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期刊信息
  • 《固体电子学研究与进展》
  • 中国科技核心期刊
  • 主管单位:中国电子科技集团公司
  • 主办单位:南京电子器件研究所
  • 主编：杨乃彬
  • 地址：南京中山东路524号(南京160信箱43分箱)
  • 邮编：210016
  • 邮箱：gtdz@chinajournal.net.cn
  • 电话：025-86858161
  • 国际标准刊号：ISSN：1000-3819
  • 国内统一刊号：ISSN：32-1110/TN
  • 邮发代号:
  • 获奖情况:
  • 中国期刊方阵双效期刊,江苏省第六届优秀期刊,工信部09-10年期刊编辑质量优秀奖
  • 国内外数据库收录:
  • 美国化学文摘（网络版）,荷兰文摘与引文数据库,中国中国科技核心期刊,中国北大核心期刊（2008版）,中国北大核心期刊（2011版）,中国北大核心期刊（2014版）,中国北大核心期刊（2000版）
  • 被引量:2461