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中文摘要：
针对VLSI设计中存在的互连电感效应、热电耦合以及互连温度分布的问题,提出一种缓冲器插入延时优化方法.首先根据互连温度分布的特点得出其电阻模型和延时模型,通过延时、功耗和温度之间的热电耦合效应求得考虑互连温度分布的缓冲器插入最优化延时,利用Matlab软件求得最佳优化结果.采用该方法针对45 nm工艺节点的缓冲器插入进行分析和验证,证实了方法的有效性.研究表明,忽略互连电感效应会高估芯片的优化延时,忽略互连温度分布会低估芯片的优化延时,在全局互连尺寸较小（线宽为245 nm）时,忽略互连温度分布会低估互连延时8.71%.
英文摘要：
With influences of interconnect inductance,thermal-electric coupling effects and interconnect temperature distribution,a delay optimized method by repeater insertion is presented.A interconnect resistance model and a delay model are obtained respectively based on interconnect temperature distribution.The repeater insertion optimal delay is calculated considering electro-thermal coupling among power,delay and temperature.Optimized results are successfully obtained with Matlab software.Repeater insertion in 45 nm technology is simulated.It shows effectiveness of the method.In addition,it indicates that the optimal delay is overestimated without inductance effect.Optimal delay is underestimated without consideration of temperature distribution.As overestimated global interconnect width is 245nm,8.71% optimal delay can be underestimated without considering temperature distribution effect.
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