中文摘要：

采用脉冲激光沉积法在P型GaAs基片上制备了缺氧的钛SrTiO3薄膜．X射线衍射测量证明SrTiO3薄膜外延生长．I-V曲线测量显示很好的整流性，说明该SrTiO3薄膜与GaAs形成p-n结．该结的电输运机制为应变导致的隧穿电流，且其电输运性质不受光照影响．

英文摘要：

We have prepared oxygen-deficient SrTiO3 films on p-GaAs substrates using pulsed laser deposi- tion. X-ray diffraction measurements showed that SrTiO3 thin films were epitaxially grown. The I-V curves showed good rectifying properties, indicating that a p-n junction formed between SrTiO3 films and GaAs interface. The electrical transport mechanism of the junction should be strain induced tunneling current. The electrical transport properties were not affected by illumination.