中文摘要：

在无蒸馏和无惰性气氛保护的条件下,快速制备了用于组合合成Pb（ZrxTi1-x）O3薄膜的前驱溶液PT和PZ。采用组合法在Pt/Ti/SiO2/Si衬底上制备了一系列Pb（ZrxTi1-x）O3组分梯度薄膜。经XRD分析表明,薄膜具有钙钛矿结构,择优取向为（111）。SEM结果显示薄膜厚度在500nm左右。电滞回线的测试表明,下梯度薄膜PZT-654表现出良好的铁电性能,明显优于其它薄膜。PZT-654梯度薄膜的剩余极化强度Pr为38.4μC/cm2,矫顽场Ec为75.0kV/cm,有较大的极化偏移,Poffset为12.9μC/cm2,表现出梯度铁电薄膜的特性。

英文摘要：

The PT and PZ precursor solutions,which could be used for combinatorial synthesis of Pb（ZrxTi1-x）O3 thin film,were prepared by a simple process without distillation and inert gas shielding in a few minutes.A series of composition gradient Pb（ZrxTi1-x）O3 thin films were prepared on Pt/Ti/SiO2/Si substrate by a combinatorial synthesis.XRD analysis showed that the composition gradient Pb（ZrxTi1-x）O3 thin films possessed perovskite structure with（111）-preferred orientation.SEM showed that the thickness of the thin film was around 500 nm.The hysteresis loops showed that the down-graded thin film PZT-654 possessed favorable ferroelectric property,which was better than other thin films.The remnant polarization（Pr） was 38.4 μC/cm2,the coercive field（Ec） was about 75.0 kV/cm and the polarization offset was 12.9 μC/cm2,which exhibited the characteristic of gradient ferroelectric thin film.