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中文摘要：
采用熔体提拉法生长出了高质量的a轴和c轴GdVO4单晶。测量了GdVO4晶体的室温透过光谱，结果表明GdVO；晶体的短波透过截止边为338nm，长波透过截止边大于3000nm，透过范围覆盖紫外、可见、近红外和部分中红外波段，因此可以在较宽波长范围内实现拉曼激光频移。研究了GdVO4晶体在532nm和355nm皮秒激光脉冲抽运下的受激拉曼散射（SRS）。采用腔外单次通过方式，获得了3级斯托克斯线（557．98nm，586．86nm，618．92nm）和1级反斯托克斯线（508．01nm），得到GdV04晶体一级斯托克斯拉曼散射的稳态增益系数为26．6±0．2cm／GW，二级斯托克斯拉曼散射的稳态增益系数为14．0±0．2cm／GW，受激拉曼散射的整体转换效率达到43％。报道了GdVO4晶体355nm激发的受激拉曼散射，观察到2级斯托克斯谱线（365．9nm，378．1nm），在此条件下测得一级斯托克斯谱线的拉曼增益高达114±9cm／GW。
英文摘要：
By Czochralski method, high quality GdVO4 single crystals were grown out along a-axis and c-axis. The transmission spectrum of GdVO4 crystal was measured at room temperature. The ultra-violet cut-edge is 338 nm and the infrared cut-edge is larger than 3000 nm, so the transmission spectrum of GdVO4 crystal could cover the region from ultra-violet to part of mid- infrared, and it indicats that GdVO4 crystal could be used for Raman frequency shifting in a wide wavelength scope. The stimulated Raman scattering （SRS） excited by 532 nm and 355 nm pico- second pulses was investigated in GdVO4 crystal. With an ultra-cavity single-pass configuration, three Stokes lines （557.98 nm, 586.86 nm, 618.92 nm） and one anti-Stokes lines （508.01 nm） were observed. The steady-state Raman gain coefficient for the first Stokes line was calculated to be 26.6±0.2 cm/GW, the gain coefficient for the second Stokes line was calculated to be 14.0±0.2 cm/GW, and the total Raman conversion efficiency reached to 43%. For GdVOI crystal, the SRS of 355 nm laser was reported. Two Stokes lines （365.9 nm, 378.1 nm） were observed, and in this condition the steady-state Raman gain coefficient for the first Stokes line was measured as high as 114±9 cm/GW.
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