实验研究了非晶态As2S8半导体薄膜在紫外汞灯和He-Cd激光照射下的光诱导现象,证实了光照射后的As2S8薄膜的折射率增大,体积缩小,可见光吸收谱的吸收带蓝移。在此基础上,应用光折变效应试制了As2S8条波导,观测到As2S8条波导的光阻断效应,实现了光.光效应的开关功能。
The photoinduced phenomena of As2S8 film under an ultraviolet and He-Cd laser irradiation are reported. It is confirmed that the refractive index of As2S8 film increases, the volume of As2S8 film decreases, and the visible optical absorption spectra edge of .A2sS8 film is shifted to the short wavdength after light irradiation. Based on study of these phenomena, an As2S8 channel waveguide was fabricated successfully by applying the photorefractive effect. On study of the optical stopping effect of As2S8 channel waveguide, it was found that the application of this effect possesses a useful switching function with the photo-optical effect.