中文摘要：

采用氯苯/三氯甲烷混合溶剂配制聚甲基丙烯酸甲酯（PMMA）：富勒烯（C60）溶液,运用旋涂法以氧化铟锡为基底制备薄膜,运用原子力显微镜对薄膜表面形貌进行表征。制备了ITO/PMMA：C60/Al结构的有机双稳态器件,采用伏安法对器件的电双稳态性能进行测试。最后,分析了有机层中的电荷陷阱对器件电双稳特性的影响。实验表明,当溶剂体积比为1：1时,薄膜粗糙度较低,以此薄膜为功能层制备的器件阈值电压为5.4 V,高/低电阻态的电阻比值达到32.1。器件的阈值电压随着薄膜表面粗糙的增加而加大。

英文摘要：

Polymethyl methacrylate（PMMA）：fullerene（C60）solution was prepared using the mixture of chlorobenzene and chloroform as the solvent.PMMA：C60 composite films were spin-coated on substrates of indium tin oxide（ITO）.Surface morphological properties of the thin film were characterized by the atom force microscopy（AFM）.The ITO/PMMA：C60/Al devices were fabricated and the electrical bistability were characterized by voltammetry.Finally,the effects of the charge trap on the electrical bistability were analyzed.The results show that the film with relatively smaller surface roughness root mean square（RMS） could be obtained at volume ratio of 1：1 between the two kinds of solvents.The threshold voltage of the organic electrical bistable devices with such smooth films is about 5.4 V,and the resistance ratio is 32.1 between high resistace state and low resistance state.The threshold voltage of the devices increases with RMS of the films.