中文摘要：

选取厚度为5、10和20nm的TiO2薄膜为过渡层，采用sol-gel法在Pt／Ti／SiO2／Si衬底上制备了Bi3．54Nd0．46Ti3O12（BNT）铁电薄膜，研究了过渡层厚度对铁电薄膜微观结构及电学性质的影响。结果表明，加入TiO2过渡层后，BNT薄膜微观结构得到改善，εr及2Pr值大幅提高，介电损耗及漏电流密度都有降低。过渡层厚度为20nm时，BNT薄膜的εr、tanδ及2Pr值分别为325、0．025（测试频率为10kHz）和36．1×10^-6C／cm^2，漏电流密度为8．45×10^-7A／cm^2（外加电场为100×10^3V／cm）。

英文摘要：

Bi3.54Nd0.46Ti3Oi2 （BNT） ferroelectdc films were fabricated on the Pt/Ti/SiO2/Si substrate by sol-gel method with 5, 10 and 20nm thick TiO2 films as buffer layer. The effects of the thickness of TiO2 buffer layer on the microstructure and electrical properties of BNT ferroelectric films were studied. The results show that, with the application of TiO2 buffer layer, the micmstructure of BNT films are improved, the εr and remanent polarization value （2Pr） of BNT films are increased while the dielectric loss and leakage current density are decreased. When the thickness of buffer layer is 20 nm, the e, tan6 and 2Pr of BNT films are 325, 0.025（f= 10 kHz） and 36.1× 10^-6 C/cm^2, respectively, while the leakage current density is 8.45 ×10^-7 A/cm^2 （E = 100× 10^3 V/cm ）.