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Low on-resistance high-voltage lateral double-diffused metal oxide semiconductor with a buried impro
  • ISSN号：1674-1056
  • 期刊名称：Chinese Physics B
  • 时间：2014.3
  • 页码：-
  • 相关项目：高压、超低功耗的易集成SOI功率器件机理与新结构研究
作者： Zhang Bo|Luo Xiao-Rong|Fang Jian|Li Zhao-Ji|
同期刊论文项目
高压、超低功耗的易集成SOI功率器件机理与新结构研究
期刊论文 37 会议论文 4 获奖 6
同项目期刊论文
A low on-resistance triple RESURF SOI LDMOS with planar and trench gate integration
A new analytical model for the surface electric field distribution and breakdown voltage of the SOI
Dual-gate lateral double-diffused metal-oxide semiconductor with ultra-low specific on-resistance
A Low Specific on-Resistance SOI Trench MOSFET with a Non-Depleted Embedded p-Island
A High Figure-of-Merit SOI MOSFET with a Double-Sided Charge Oxide-Trench
High-voltage super-junction lateral double-diffused metal oxide semiconductor with a partial lightly
A high voltage silicon-on-insulator lateral insulated gate bipolar transistor with a reduced cell-pi
A low on-resistance SOI LDMOS using a trench gate and a recessed drain
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Ultra-low specific on-resistance vertical double-diffused metal-oxide semiconductor with a high-k di
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Experimental and theoretical study of an improved breakdown voltage SOI LDMOSwith a reduced cell pit
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复合沟道氟离子增强型AlGaN/GaN HEMT的研究
A high voltage Bi-CMOS compatible buffer super-junction LDMOS with an N-typeburied layer
A low specific on-resistance SOI MOSFET with dual gates and recessed drain
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Ultralow specific on-resistance high voltage trench SOI LDMOS with enhanced RESURF effect
Analytical Model and New Structure of the Variable- k Dielectric Trench VDMOS With Improved Breakdow
Novel Reduced ON-Resistance LDMOS With an Enhanced Breakdown Voltage
A low on-resistance buried current path SOI p-channel LDMOS compatible with n-channel LDMOS
High voltage SOI LDMOS with a compound buried layer
Universal trench design method for a high-voltage SOI trench LDMOS
高k介质电导增强SOI LDMOS机理与优化设计
A high voltage Bi-CMOS compatible buffer super-junction LDMOS with an N-type buried layer
Eliminating the floating-body effects in a novel CMOS-compatible thin-SOI LDMOS
Analytical model for high-voltage SOI device with composite-k dielectric buried layer
Experimental and theoretical study of an improved breakdown voltage SOI LDMOS with a reduced cell pitch＊
期刊信息
  • 《中国物理B：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京 中关村 中国科学院物理研究所内
  • 邮编：100080
  • 邮箱：
  • 电话：010-82649026 82649519
  • 国际标准刊号：ISSN：1674-1056
  • 国内统一刊号：ISSN：11-5639/O4
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 被引量:406