本文以低压、旋转、垂直喷淋结构的MOCVD反应器为对象,应用二维数学模型分析与计算,对反应器内部的质量输运过程进行了比较详细的研究与讨论。通过计算发现:在一定范围内,增加进气流量Q、降低操作压力P、设定适宜的生长温度t、保持合理的基座转速ω等,不仅可以非常有效地抑制热浮力效应,同时也使衬底表面流体的流动速度进一步增加,从而实现反应器内部的流场和温度场的均匀分布。研究的结果,不仅为高品质的外延生长提供了有效的解决方案,而且也为MOCVD反应器的优化设计提供了重要的参考依据。
A systematic study was performed to investigate mass transport process in the 2D numerical modeling for the flow and temperature patterns of vertical rotating MOCVD reactor at low pressure by finite volume method. Under a wide range of geometric and process parameters, such as varying total flow rate of gas inlet, chamber pressure, growth temperature, wafer carrier rotation, it is finally obtained the favorable conditions of the uniform distributions of velocity and temperature profiles inside the reactor, in which the thermal buoyancy forces are effectively controlled and the flow velocity above susceptor is further increased. The CFD simulating results are beneficial to fixing on the process operating conditions, the configuration design and the parameter optimization of the MOCVD reactor.