中文摘要：

现代技术的飞速发展需要集成电路不断小型化，因而开发下一代光刻光源以满足小型化的要求成为当前的一项紧迫任务。目前工业界确定的下一代光刻光源是波长为13．5nm的极端远紫外（EUV）光源，它能够把光刻技术扩展到32nm以下的特征尺寸，氙和锑材料的等离子体光源被认为是这种光源的最佳候选者。文章在介绍EUV光刻原理和EUV光源基本概念的基础上，讨论了目前研究得最多、技术最成熟的激光产生的和气体放电产生的等离子体EUV光源，对EUV光源的初步应用进行了简单介绍，并着重对氙和锑材料产生的等离子体发射性质和吸收性质的实验与理论研究进展进行了详细介绍与讨论。目前的理论研究进展表明，统计物理模型还不能很好地预测氙和锑等离子体的发射与吸收光谱，因此迫切需要发展细致能级物理模型，以得到更为精确的等离子体光学性质参数，并用于指导实验设计。提高EUV转换效率。

英文摘要：

Considerable effort has been devoted over the last decade to the development of extreme ultraviolet （EUV） light sources for nanolithography. The 13.5 nm wavelength was imposed by industrial standards due to the availability of high-reflectivity Mo/Si multilayer mirrors so that a resolution of 32 nm can be attained. Xenon and tin are considered to be the best candidates for EUV light sources. In this review we first briefly introduce the concepts and principle of EUV lithography, and then discuss recent progress in both experimental and theoretical research on laser produced and gas discharge produced plasma light sources, with emphasis on the emission and absorption properties of xenon and tin plasmas. Theoretical studies show that statistical physical models are not yet able to predict the exact absorption and emission spectra of EUV plasmas. It is imperative that a detailed energy level model be developed to obtain accurate optical parameters to guide experimental design and to improve EUV conversion efficiency.