位置：成果数据库 > 期刊 > 期刊详情页
Effect of Ar+ ion etching treatment on the surface work function of Hg3In2Te6 wafer
  • ISSN号：0368-2048
  • 期刊名称：Journal of Electron Spectroscopy and Related Pheno
  • 时间：2013.4
  • 页码：49-52
  • 相关项目：新型近红外探测材料碲铟汞晶体表面及其M/S界面特性研究
作者： Ren, Jie|Li, Yapeng|Zhang, Wenhua|Zhu, Junfa|
同期刊论文项目
新型近红外探测材料碲铟汞晶体表面及其M/S界面特性研究
期刊论文 27 会议论文 5 专利 1
同项目期刊论文
化学抛光对Au/Hg3In2Te6接触特性的影响
Study of barrier height and trap centers of Au/n-Hg3In2Te6 Schottky contacts by current-voltage (I-V
Measurement of core level and band offsets at the interface of ITO/Hg3In2Te6(110) heterojunction by
The effect of fast annealing treatment on the interface structure and electrical properties of Au/Hg
Interpretation of the vacancy-ordering controlled growth morphology of Hg5In2Te8 precipitates in Hg3
Erratum:“Study of Au/Hg3In2Te6 interface by synchrotron radiation photoemission spectrosco
Study of Au/Hg3In2Te6 interface by synchrotron radiation photoemission spectroscopy
The effect of structural vacancies on the twins in defect zinc-blende crystal Hg3In2Te6 grown by Bri
Study on valence band and work function of n-type Hg3In2Te6 single crystal by photoelectron spectros
The effect of chemical polishing on the interface structure and electrical property of Au/Cd0.9Zn0.1
On the morphology and crystallography of Hg5In2Te8 precipitation in Hg3In2Te6
Cu/Hg_3In_2Te_6欧姆接触形成机制的研究
ZnO过渡层对Au/Hg_3In_2Te_6肖特基接触特性的影响研究
HRTEM study on the ordered phases in Hg3In2Te6 crystals grown by Bridgman method
新型Hg3In2Te6芯片引线键合机制的研究
Effect of Passivation on the Electrical Properties ofAu/Hg3In2Te6 Schottky Contact
Effect of Nano Al Interlayer on the Schottky ContactProperty Between Metal and Hg3In2Te6 Wafer
不同温度下碲铟汞晶体结构的XRD研究
新型Hg3In2Te6芯片引线的键合机制
ZnO 过渡层对 Au / Hg3In2Te6肖特基接触特性的影响研究
Cu / Hg3In2Te6欧姆接触形成机制的研究
缺陷闪锌矿晶体Hg3In2Te6孪晶的EBSD和HRTEM观察