铜 nanowires 被电气化学的免职在在铝底层上阳极化的阳极的氧化铝模板内制作。铜 nanowires 的形态学,作文和结构借助于扫描电子显微镜学(SEM ) 被描绘,传播电子显微镜学(TEM ) ,高分辨率的传播电子显微镜学(HRTEM ) ,精力散(版本) 并且 X 光检查衍射光谱学(XRD ) 。结果表明铜 nanowires 与直径稠密、连续、高度水晶、一致。与二终端的电的大小描绘的铜 nanowires wrer 的电的性质。不同当前电压(I-V ) 单个铜 nanowire 的特征被观察,可能的传导性的机制被讨论。水晶的铜 nanowires 在未来 nanoelectronic 设备和电路的申请是有希望的。
Copper nanowires were fabricated by electrochemical deposition inside anodic alumina template anodized on aluminum substrate. The morphology, composition and structure of the copper nanowires were characterized by means of scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), energy-dispersive (EDS) and X-ray diffraction spectroscopy (XRD). The results revealed that copper nanowires were dense, continuous, highly-crystalline and uniform with diameters. The electrical properties of copper nanowires wrer characterized with two-terminal electrical measurements. Different current-voltage (I-V) characteristics of single copper nanowire were observed and possible conductive mechanisms were discussed. The crystalline copper nanowires are promising in application of future nanoelectronic devices and circuits.