作者机构:[1]Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education, Institute of Microelectronics, Xidian University, Xi 'an 710071, China
相关基金:Project supported by the National Natural Science Foundation of China (Nos. 60676009, 60776034), the Doctoral Foundation of Ministry of Education of China (No. 20050701015), and the National Outstanding Young Scientist Foundation of China (No. 60725415).