中文摘要：

针对铷（^R7 Rb）原子钟激励光源微型化和高温工作的特殊需求，设计并制备了对应铷原子能级跃迁的795nm垂直腔面发射激光器（VCSEL）。首先，根据k·p理论计算了InAlGaAs／AlGaAs量子阱的价带能级和材料增益，得到最优的量子阱组分和厚度；然后，采用一维传输矩阵方法设计了795nrfl波段的布拉格反射器（DBR），根据完整结构VCSEL器件的驻波场分布设计了掺杂分布；最后，采用金属有机气相外延（MOVPE）技术生长了优化的795rimVCSEI．外延结构，并制备了氧化限制型非闭合台面结构的795nm顶发射器件。实验显示：封装后的75μm口径器件可在室温至85℃范围内连续工作，最高功率为17mw，激光光束呈圆形，发散角为15°，激射波长的温漂系数为0．064nm／℃；在温度为52℃、注入电流为100mA时，激射波长位于794．7nm（对应铷原子钟需要的波长），基本满足铷原子钟激励光源对波长稳定和高温工作的要求。

英文摘要：

For the special requirements of the exciting source of a 87 Rb based atomic clock for the miniaturization and high temperature conditions, a 795 nm Vertical Cavity Surface Emitting Laser（VC- SEL）corresponding to the Rb atom energy level transition was designed and fabricated. Firstly, the energy levels and material gains of the InAlGaAs/AlGaAs Multiple Quantum Wells （MQWs） were calculated by the k p method to optimize the compositions and thicknesses of the quantum wells. Then, a Distributed Bragg Reflectors（DBRs） at 795 nm were designed and their reflection characteristics, longitudinal optical fields and averaged doping profiles were calculated and optimized using a onedimensional transfer matrix method. Finally, the epitaxial structure of the 795 nm VCSEI. with optimized MQWs and DBRs were grown on a GaAs substrate by Metal Organic Vapor Phase Epitaxy （MOVPE） and the oxide-confined 795 nm top-emitting VCSELs with unclosed-mesa structures were fabricated and characterized. Experimental results indicate that the packaged VCSELs can keep lasing under a ew current from 25 ~C to 85 ℃ with power decreasing from 17 mW to 1.8 mW, the far field profiles are circular with a divergence angle of 15° and the temperature-shift of the lasing wavelength is 0. 064 nm/℃. Moreover, the lasing wavelength moves to the wavelength required by ^87Rb atoms at an ambient temperature of 52 ℃ and a current of 100 mA. The 795 nm VCSELs satisfy the basic require- ments of 87Rb based miniaturized atom clocks for stable operation in a special wavelength and hightemperatures.