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Composition dependence of interface control and optimization on the performance of an HfTiON gate di
  • 期刊名称：Semiconductor Science and Technology
  • 时间：0
  • 页码：105019-1-105019-8
  • 语言：英文
  • 相关项目：非晶稀土氧化物高k栅介质材料的制备及物理特性研究
作者： Sun, Z. Q. et al.|Fang, Z. B.|He, G.|
同期刊论文项目
非晶稀土氧化物高k栅介质材料的制备及物理特性研究
期刊论文 26 专利 1
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