中文摘要：

金刚石是非常理想的功能器件材料，由于室温下金刚石缺少浅施主态，己成为金刚石作为电子器件材料的主要障碍之一。最近报道显示，硼掺杂同质外延金刚石层暴露在氘离子束中能形成浅施主态的n型电导。研究了CVD合成类Ib型金刚石薄膜，通过硼、氢离子注入掺杂及退火温度对金刚石薄膜导电特性的影响。

英文摘要：

Diamond is a kind of ideal material of functional apparatus. The absence of a shallow donor in diamond with reasonably room temperature was one of the key obstacles for making diamond-based semiconductor devices. Recent report showed that exposure of p-type （B doped） homoepitaxial diamond layers to deuterium plasma can form n-type diamond with a shallow donor state. The effects of B and H ion injection and changing anneal temperature on the conductivity of diamond film （ I b） by CVD were investigated.