欢迎您!
东篱公司
退出
申报数据库
申报指南
立项数据库
成果数据库
期刊论文
会议论文
著 作
专 利
项目获奖数据库
位置:
成果数据库
>
期刊
> 期刊详情页
Characterization and photoluminescence of Co-doped SiC films
ISSN号:0021-8979
期刊名称:Journal of Applied Physics
时间:2013.9.27
页码:0615021-0615024
相关项目:SiC基稀磁半导体的局域结构与自旋相关磁、输运特性
作者:
Xianke Sun,Xin Jin, Shiqi Wang, Huarui Liu, Peng|Yukai Ana),Ruisong Guo,Jiwen Liub)|
同期刊论文项目
SiC基稀磁半导体的局域结构与自旋相关磁、输运特性
期刊论文 16
同项目期刊论文
Correlation between oxygen vacancies and magnetism in Fe-doped In2O3 films
Local Mn structure and room temperature ferromagnetism in Mn-doped In2O3 films
Effect of Mn doping on the structural, optical, and magnetic propertiesof In2O3 films
The local structure, magnetic, and transport properties of Cr-doped In2O3 films
Local structure of Fe-doped In2O3 films investigated by X-ray absorption fine structure spectroscopy
Role of Co Clusters and Oxygen Vacancies in the Magnetic and Transport Properties of Co-Doped In2O3
Effect of Mn doping on the structural, magnetic and transport properties of SiC films
Investigation of microstructure and photoluminescence of Mn and Co co-doped SiC films
Investigation of structure, magnetic, and transport properties of Mn-dopedSiC films
Room temperature ferromagnetism of nonmagnetic element Ca-doped LiNbO_3 films