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用于SOC设计的新一代纳米级CMOS器件仿真模型的研究和验证
  • 项目名称：用于SOC设计的新一代纳米级CMOS器件仿真模型的研究和验证
  • 项目类别：重大研究计划
  • 批准号：90607017
  • 申请代码：F040205
  • 项目来源：国家自然科学基金
  • 研究期限：2006-07-01-2008-12-31
  • 项目负责人：何进
  • 负责人职称：教授
  • 依托单位：北京大学
  • 批准年度：2006
中文摘要：

SOC以纳米级工艺技术和知识产权IP核复用为基础支撑。而器件模型和电路CAD软件是SOC芯片系统设计的工具,是链接纳米工艺技术和知识产权IP核的桥梁。基于此, 我们提出开展"用于SOC设计的新一代纳米级CMOS器件仿真模型的研究和验证"项目, 旨在争取2-3年内在SOC用纳米级CMOS模型的研究和应用上有突破性进展: 建立国际创新性的以物理的表面势解析解和电流方程为基础的模型硬核,发展适用于所有纳

中文主题词： SOC;工艺技术; 知识产权IP核;器件模型;电路CAD软件
成果综合统计
成果类型
数量
  • 期刊论文
  • 会议论文
  • 专利
  • 获奖
  • 著作
  • 71
  • 42
  • 0
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  • 0
期刊论文
Full-band quantum transport based simulation for carbon nanotube field effect transistor from chiral
A complete surface potential-based core model for the undoped symmetric double-gate MOSFETs
A Carrier-Based Approach for Compact Modeling of the Long Channel Undoped Symmetric Double-Gate MOSF
Analytic Carrier-Based Charge and Capacitance Model for Long-Channel Undoped Surrounding-Gate MOSFET
An explicit current–voltage model for undoped double-gate MOSFETs based on accurate yet analytic app
An approximate carrier-based compact model for fully depleted surrounding-gate MOSFETs with a finite
A unified carrier-based model for undoped symmetric double-gate and surrounding-gate MOSFETs
Comments on ‘Modeling MOSFET surface capacitance behavior under non- equilibrium’
Benchmark tests on surface potential based charge sheet models
对表面势为基础的MOSFET片电荷模型的基本检验
A new analytic approximation to general diode equation
A carrier-based analytic DCIV model for long channel undoped cylindrical surrounding-gate MOSFETs
Numerical study on a lateral double-gate tunneling field effect transistor
Carrier-based compact modeling of charge and capacitance of long channel undoped symmetric double-ga
Linear Cofactor Difference Extrema of MOSFET’s Drain–Current and Application to Parameter Extraction
Analytic channel potential solution to the undoped surrounding-gate MOSFETs
A physics-based analytic solution to the MOSFET surface potential from accumulation to strong-invers
An analytic mdoel to account for quantum-mechanical effects of MOSFETs using a parabolic potential w
A Non-Charge-Sheet Analytic Model for Symmetric Double-Gate MOSFETs With Smooth Transition Between P
A Charge-Based Model for Long-Channel Cylindrical Surrounding-Gate MOSFETs From Intrinsic Channel to
FinFET reliability study by forward gated-diode eneration recombination current
A rigorous carrier-based analytic model for undoped ultra-thin-body silicon-on-insulator (UTB-SOI) M
An explicit carrier-based compact model for nanowire urrounding-gate MOSFET simulation
Generic Carrier-Based Core Model for Undoped Four-Terminal Double-Gate MOSFETs Valid for Symmetric,
A Compact Model of Silicon-Based Nanowire MOSFETs for Circuit Simulation and Design
An Analytic Model for Nanowire MOSFETs With Ge/Si Core/Shell Structure
非掺杂对称双栅的基于完整表面电势的核心模型
会议论文
Benchmark test on conventional surface potential based charge-sheet model and advanced PUNSIM develo
Carrier-based approach: A generous strategy to develop compact model of non-classical CMOS
A Carrier-Based Analytic Model for Undoped (Lightly Doped) Ultra-Thin-Body Silicon-on-Insulator (UTB
A carrier-based analytic model for the undoped (lightly doped) cylindrical surrounding-gate MOSFETs
An Explicit Carrier-Based Compact Model for Surrounding-Gate MOSFETs
Measuring method for Economic Benefit of Industrial Enterprises Based on Panel Data
A Complete Analytic Surface Potential-Based Core Model for Undoped Cylindrical Surrounding-Gate MOSF
Complicated Subthreshold Behavior of Undoped Cylindrical Surrounding-Gate MOSFEETs
A Surface-Potential-Based Non-Charge-Sheet Core Model for Fully Depleted SOI MOSFET
PUNSIM: An advanced surface potential based MOSFET model
Charge-based model of UTB nanowire MOSFETs applicable for analog and digital circuit simulation
Modeling Nanoscale MOSFETs By a Neural Network Approach
Surface Potential versus Voltage Equation from Accumulation to Strong Region for Undoped Symmetric D
From Chirality to Device Performance: Full-Band Based Quantum Transport Simulation for Carbon Nanotu
ALTRAS-CNFET: Full-Band Based Quantum Transport Simulator for Carbon Nanotube Field Effect Transisto
An Explicit Surface Potential Model of the Bulk-MOSFET with Inclusion of Poly-Gate Accumulation, Dep
A Continuous yet Explicit Carrier-Based Core Model for the Long Channel Undoped Surrounding-Gate MOS
Continuous Surface Potential versus Voltage Equation of Undoped Surrounding-Gate MOSFETs and Its Sol
A complete carrier-based non-charge-sheet analytic theory for nano-scale undoped surrounding-gate MO
An analytic surface potential based non-charge-sheet poly-Si TFT model including substrate and film
A Carrier-Based Analytic Model for Undoped Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs
An Approximate Explicit Solution to General Diode Equation
Generic Carrier-Based Approach to Develop Compact Models of Non-Classical CMOS Devices
Tests on Symmetry and Continuity between BSIM4 and BSIM5
A Unified Carrier-based Model for Symmetric Double-gate and Surrounding-gate MOS Transistors
Global Continuous Channel Potential Solution for Double-Gate MOSFETs
Terahert detection analysis of Nanowire Gated Field Effect Transistor
Analog/RF Performance analysis of Coaxial Carbon Nanotube MOS Field Effect Transistor from non-equil
Terahertz Wave Generation and Detection Analysis of Nanowire Gated Field Effect Transistor
Numerical Analysis on Si-Ge Nanowire MOSFETs with Core-Shell Structure
Study on the Si-Ge nanowire MOSFET with the core-shell structure
Generic Carrier-Based Core Model for Four-Terminal Double-Gate MOSFET Valid for Symmetric, Asymmetri
Carrier-Based Approach for Modeling General Four-Terminal Undoped DG-MOSFETs
A Unified Charge-Based Model for Symmetric DG MOSFETs Valid for Both Heavily Doped Body and Undoped
A neural network method to model nanoscale MOSFET performance
A Complete Surface Potential-Based Current-Voltage and Capacitance-Voltage Core Model for Undoped Su
FinFET Reliability Study by Forward Gated-Diode Method
Electrothermal Coupling and Threshold-switching Simulation Study on Phase Change Memory (PCM) Cell
Modeling of Dynamic Threshold Voltage in High K Gate Stack and the Application in FinFET Reliability
A Charge-Based Compact Model for Arbitrary Doped Cylindrical Surrounding-Gate MOSFETs
Compact Modeling of Nano-Scale Surrounding-Gate MOSFETs: Potential-Based Model and Discussion on Com
A Complete Surface Potential-Based Core Model for the Undoped Symmetric Double-Gate MOSFETs
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