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中文摘要：
作为一种零带隙的半导体，石墨烯不适合用于逻辑器件。石墨烯带隙的打开与调控成为当前国际研究的热点与难点。针对这一难点，本项目拟通过氮原子对石墨烯的掺杂来实现对石墨烯带隙的打开与调制。首先，采用化学气相沉积法和固源生长法制备大面积的氮掺杂石墨烯，系统研究生长工艺和金原子插层退火工艺对氮原子掺杂结构和浓度的影响规律，实现氮掺杂石墨烯的可控制备；然后在此基础上，系统分析制备工艺、掺杂结构和浓度、石墨烯电子输运特性三者之间的相互影响规律，揭示氮原子替位掺杂对石墨烯能带结构的调控机制，实现大面积石墨烯带隙的打开和调控；最后，研制出高开关比、高迁移率的场效应晶体管。本项目的研究，不仅对深入理解石墨烯氮掺杂的物理效应及其带隙调控的物理机制具有基础科学意义，而且对探索石墨烯在逻辑器件的应用也具有积极意义。
结论摘要：
英文主题词graphene；doping；electrical properties；；
成果综合统计
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期刊论文
Three-dimensional CoS2/RGO hierarchical architecture as superior-capability anode for lithium ion ba
Low platinum loading PtNPs/graphene composite catalyst with high electrocatalytic activity for dye-s
Large-area synthesis of high-quality and uniform monolayer graphene without unexpected bilayer regio
Synthesis and electrochemical properties of graphene-modified LiCo1/3Ni1/3Mn1/3O2 cathodes for lithi
Performance enhancement in chemical vapor deposition graphene field-effect transistors by high-k die
Self-assembled CoS2 nanoparticles wrapped by CoS2-quantum-dots-anchored graphene nanosheets as super
Three-dimensional CNT/graphene–sulfur hybrid sponges with high sulfur loading as superiorcapacity ca
Observation of tunable electrical bandgap in large-area twisted bilayer graphene synthesized by chem
Performance enhancement in chemical vapor deposition graphene field-effect transistors by high-kappa
The green synthesis of reduced graphene oxide by the ethanol-thermal reaction and its electrical pro
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