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适用于65nm技术代以后的CMOS器件栅工程和沟道工程关键技术研究
  • 项目名称：适用于65nm技术代以后的CMOS器件栅工程和沟道工程关键技术研究
  • 项目类别：重点项目
  • 批准号：60636010
  • 申请代码：F040601
  • 项目来源：国家自然科学基金
  • 研究期限：2007-01-01-2010-12-31
  • 项目负责人：许军
  • 负责人职称：研究员
  • 依托单位：清华大学
  • 批准年度：2006
中文摘要：

本项目将重点研究基于应变硅等新材料的沟道工程、高介电常数栅介质材料及金属栅电极材料的栅工程等相关集成技术的新原理、新技术，为发展具有自主知识产权的超大规模集成电路技术奠定基础。研究内容包括 (1)超高真空外延生长单晶锗硅、弛豫锗硅、应变硅材料及工艺优化研究；基于锗硅及应变硅为沟道材料的集成工艺。(2)新型栅结构中高介电常数材料的选择、制备及可靠性研究；金属栅电极，高介电常数材料、沟道材料及金属栅电极材料界面特性的研究。(3)探索将上述高迁移率沟道材料、高介电常数栅介质材料以及新型金属栅材料有机地结合起来，形成完整的适用于65纳米技术代以后的集成化CMOS工艺；完善新型CMOS结构的性能表征及理论模型。本项目将解决65nm技术代以后CMOS栅工程及沟道工程面临的关键基础性科学问题，它的实施将为实现新一代高性能的CMOS器件与电路提供理论与实验的指导。

中文主题词： 栅工程;沟道工程;高介电常数材料;应变硅;金属栅电极
成果综合统计
成果类型
数量
  • 期刊论文
  • 会议论文
  • 专利
  • 获奖
  • 著作
  • 36
  • 5
  • 0
  • 0
  • 0
期刊论文
A universal electron mobility model of strained Si MOSFETs based on variational wave functions
Electrical hysteresis of the Ti0.25Al0.75Ox dielectric films after high-temperature treatment
Microstructure and dielectric properties of La2O3 doped amorphous SiO2 films as gate dielectric mate
Band alignments and improved leakage properties of (La2O3)0.5(SiO2)0.5/SiO2/GaN stacks for high-temp
Characterization of Titania Incorporated with Alumina Nanocrystals and Their Impacts on Electrical H
Impacts of additive uniaxial strain on hole mobility in bulk Si and strained-Si p-MOSFETs
Fabrication of strained Ge film using a thin SiGe virtual substrate
UV emission of tetragonal ZrO2 nanocrystals embedded in ZrSiO4 amorphous matrix
A TiAl2O5 nanocrystal charge trap memory device
A Charge-Trap Memory Device with the Composition-Modulated Zr-Silicate High-k Dielectric Multilayer
高性能绝缘层上应变硅动态阈值MOSFET的优化设计
Study on the thermal stability and electrical properties of the high-k dielectrics (ZrO2)x(SiO2)1-x
The effect of Si surface nitridation on the interfacial structure and electrical properties of (La2O
Transmission electron microscopy observations on the interfacial structures of the Pt/SrBi2Ta2O9/Pt
Impact of 〈100〉Channel Direction for High Mobility p-MOSFETs on Biaxial Strained Silicon
Fabrication and characterization of strained Si material using SiGe virtual substrate for high mobil
Fabrication of High Quality SiGe Virtual Substrates by Combining Misfit Strain and Point Defect Tech
Characterization upon potential properties of HfO2 stabilized by Y2O3 films as cubic phase
Morphology and atomic-scale surface structure of barium titanate nanocrystals formed at hydrothermal
Effect of NH3 and N2 annealing on the interfacial and electrical characteristics of La2O3 films grow
Characterization of high-k gate dielectrics by atomic-resolution electron microscopy: current progre
Challenges in Atomic-Scale Characterization of High-K Dielectrics and Metal Gate Electrodes for Adva
An investigation into ultra-thin pseudobinary oxide (TiO2)x(Al2O3)1-x films as high-k gate dielectri
The thermal stability and electrical properties of LaErO3 films as high-k gate dielectrics
Hydrothermal synthesis of nanocrystalline BaTiO3 particles and structural characterization by high-r
应变硅NMOSFET中电子迁移率的增强及其温度特性
Thermal stability and electrical properties of titanium-aluminum oxide ultrafilms as high-k gate die
高k栅介质原子分辨率的电镜表征：研究进展和展望
Challenges in Atomic-Scale Characterization of High-k Dielectrics and Metal Gate Electrodes for Advanced CMOS Gate Stacks
采用SiGe虚拟衬底高迁移率应变硅材料的制备和表征
〈100〉沟道方向对高迁移率双轴应变硅p-MOSFET的作用
应变硅n-MOSFET中电子迁移率的增强及其温度特性
Fabrication of High Quality SiGe Virtual Substrates by Combining Misfit Strain and Point Defect Techniques
会议论文
Influence of temperature on Ge layer morphology growth by ultrahigh vacuum CVD
Static noise margin analysis of double-gate MOSFETs SRAM
Silicon quantum dots in an oxide matrix for third generation photovoltaic solar cells
Germanium-Silicon Quantum Dots Produced by Pulsed Laser Deposition for Photovoltaic Applications
Strained Silicon Dynamic Threshold Voltage MOSFETs for Low Voltage and Ultra High Speed CMOS circuit
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