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用于SOC的新一代嵌入式铁电存储器材料、器件与兼容工艺
  • 项目名称：用于SOC的新一代嵌入式铁电存储器材料、器件与兼容工艺
  • 项目类别：重大研究计划
  • 批准号：90407023
  • 申请代码：F040606
  • 项目来源：国家自然科学基金
  • 研究期限：2005-01-01-2008-12-31
  • 项目负责人：任天令
  • 负责人职称：教授
  • 依托单位：清华大学
  • 批准年度：2004
中文摘要：

本项目将研究适于SOC的新一代嵌入式铁电存储器材料、器件与兼容工艺。主要研究内容包括（1）适于SOC嵌入式应用的铁电存储器介质、电极材料与工艺研究；（2）铁电存储器与CMOS的工艺兼容性研究；（3）存储单元结构研究与建模；（4）铁电存储阵列及外围电路的设计、验证与优化；（5）含嵌入式铁电存储器的SOC集成与实现技术。本项目将解决用于SOC的嵌入式铁电存储器实现的关键基础性科学问题，将为这类具有重要应用价值的新型高性能存储器及其嵌入式集成化芯片的实用化奠定坚实的基础。

中文主题词： 铁电存储器;SOC;铁电薄膜;兼容工艺;嵌入式
成果综合统计
成果类型
数量
  • 期刊论文
  • 会议论文
  • 专利
  • 获奖
  • 著作
  • 69
  • 16
  • 0
  • 0
  • 0
期刊论文
Pt/Pb(Zr,Ti)O3/Pt capacitor with excellent fatigue properties by sol-gel process applied to FeRAM
Fabrication Process of Sol-Gel Spin Coating for SrBi2Ta2O9 Films Applied to FeRAM
A Novel Scheme of Cross Bitlines for FeRAM Array
The effect of seeding layers on ferroelectric properties of PTZT thin films
Preparation and ferroelectric properties of Bi4Zr0.5Ti2.5O12 thin films on LaNiO3 bottom electrode b
Characteristics and Mechanism of Conduction/Set Process in TiN/ZnO/Pt Resistive Random Access Memori
Gd-doping improved resistive switching characteristics of TiO2 based resistive memory devices
PbTiO3/PbZr0.3Ti0.7O3/PbTiO3夹心结构铁电薄膜子晶层的优化
基于静态电滞回线的铁电电容模型
热分解气氛对溶胶-凝胶法制备BLT 铁电薄膜性能的影响
PbO对Pb(Zr0.52Ti0.48)O3陶瓷相成分的影响
PZT陶瓷靶材的制备及相成分分析
Effects of TiO2 seeding layer on crystalline orientation and ferroelectric properties of Bi3.15Nd0.8
Modeling ferroelectric capacitors based on the dipole switching theory
Effect of precursor solution concentration on the grain orientation of Bi3.15Nd0.85Ti3O12 thin films
Comparative investigating the properties of Pb-based multilayer ferroelectric thin films for FeRAM
The thickness effect of PZT19 in PZT19/PTZT/PZT19 thin film
Effect of annealing temperature on leakage current characteristics of Bi3.25La0.75Ti3O12 thin films
Effect of excess Pb in PT layers on microstructure and dielectric characteristic of PT/PZT/PT thin f
Characteristics of Bi3.25La0.75Ti3O12 thin films on p-Si with a buffer layer of Bi4Ti3O12 prepared b
Studies On The Relax Behavior Of Srbi 2 Ta 2 O 9 Thin Films
TiO2种子层对Bi3.15Nd0.85 Ti3 O12铁电薄膜的结晶取向和铁电性能的影响
基于极化反转函数的铁电电容器件模型
LSMO缓冲层对PTZT铁电薄膜性能的影响
Study on Stress of the Films Applied to FeRAM
Imprint and fatigue properties of Pt/Pb(Zr0.4Ti0.6)O3/Pt capacitor
Frequency dependence of the dielectric properties and coercive field of PbZr0.4T0.6iO3 thin films
A new high-reliable 2T/1C FeRAM cell
Properties Of Neodymium-Doped Bi4ti3o12 Thin Films For Ferroelectric Random Access Memory
Modeling switching delay of ferroelectric domains for ferroelectric capacitor
Comparison of Properties of Pt/PZT/Pt and Ru/PZT/Pt Ferroelectric Capacitors
Ferroelectric properties of Pt/PbTiO3/PbZr0.3Ti0.7O3/PbTiO3/Pt integrated capacitors etched in noncr
Effect of anneling on ferroelectric properties of Bi3.25La0.75Ti3O12 thin films prepared by the sol-
A compact model for the simulation of ferroelectric capacitor
Fabrication And Properties Of Ru/Pb(Zr0.4ti0.6)O3/Pt Capacitor
Study on oxidization of Ru and its application as electrode of PZT capacitor for FeRAM
An Improved Ferroelectric Capacitor Compact Model Based on Probability Theory for Circuits Simulatio
Effect of excess Bi2O3 on the ferroelectric and dielectric properties of Bi3.25La0.75Ti3O12 thin fil
Ferroelectric properties of Bi3.25La0.75Ti3O12 thin films prepared by sol-gel method
An innovated process of Pt/PbTiO3/PbZr0.3Ti0.7O3/PbTiO3/Pt integrated ferroelectric capacitors for F
Sol-gel 法制备Bi3.15Nd0.85 Ti3 O12铁电薄膜的性能研究
钛酸铋基铁电薄膜研究进展
The domain structure and polarization retention properties of PT/PZT/PT ferroelectric thin film
The influence of the thickness of TiO2 seeding layer on structural and electrical properties of Bi3.
Ferroelectric properties of Zr-doped Bi3.15Nd0.85Ti3O12 thin film deposited by a sol-gel method
The domain structure and electric properties of double-side seed layers PT/PZT/PT thin films
Study of the J-V characteristics of Bi4Ti3O12 ferroelectric thin film
Vacuum Annealing Induced Room Temperature Ferromagnetism in Co0.1Ti0.9O2－δ Films Prepared by Sol-Gel
Preparation and ferroelectric properties of Bi3.4Ce0.6Ti3O12 thin films grown by sol-gel method
PT/PZT/PT铁电薄膜的铁电畴和畴壁
张应力对准同形相界Pb（Zr,Ti）O_3薄膜相变和铁电性能影响
La，V共掺杂的Bi4Ti3O12铁电薄膜的溶胶-凝胶法制备及性能测试
磁控溅射中工艺参数对ZnO：Al薄膜性能的影响
沉积压力对磁控溅射纳米硅薄膜结构和性能影响
Ti掺杂BiFeO3陶瓷的结构和铁电性能研究
TiO2种子层对Bi3．15Nd0．85Ti3O12铁电薄膜的结晶取向和铁电性能的影响
衬底温度对ZnO：Al薄膜结构和性能的影响
退火气压对Bi3.25La0.75Ti3O12铁电薄膜的微观结构和铁电性能的影响
热分解气氛对溶胶-凝胶法制备BLT铁电薄膜性能的影响
Sol-gel法制备Bi3．15Nd0．85Ti3O12铁电薄膜的性能研究
退火温度对ZnO：Al透明导电薄膜结构和性能的影响
一种可以表征铁电晶体管存储性能退化的宏模型
YIG磁性薄膜低温集成工艺
硅基压电多层膜悬臂梁的偏转模型和优化设计
铁电存储器的基本单元及其工作模式
会议论文
A novel circuit scheme and analysis for three-level feram
Improved program mode for memory array based on one ferroelectric field-effect transistor
Resistive Switching Behaviors and Mechanism of Transition Metal Oxides-Based Memory Devices
Preparation and characterization for B3.15Nd0.85Ti3O12 thin film by sol-gel process
Understanding the resistance switching mechanisms of binary metal oxides with the percolation model
Characteristics of sub-100nm Ferroelectric Field Effect Transistor with High-k Buffer Layer
The Effect of Current Compliance on the Resistive Switching Behaviors in TiN/ZrO2/Pt Memory Device
Highly uniform bipolar resistive swithing characteristics of TiN/ZrO2/Pt devices
Bipolar Resistive Switching Behaviors of Ag/Si3N4/Pt Memory Device
A Fast Bitline Capacitance Evaluation Method for Designing Ferroelectric Random Access Memory
A Dynamic Adaptive Reference Generation Scheme for 1T1C FeRAM
Modeling and analysis of effect on bit-line voltage caused by imprint in FeRAM
Gd doping improved resistive switching characteristics of TiO2-based resistive memory devices
Reversible resistive switching of Gd-doped TiO2 thin films for nonvolatile memory applications
A Unified Physical Model of Switching Behavior in Oxide-Based RRAM
Oxide-Based RRAM Switching Mechanism: A New Ion Transport Recombination Model
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