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中文摘要：
半导体可饱和吸收体被动调Q开关具有光化学性质和可饱和吸收稳定、热导性好、无退化现象及损伤阈值高等优点；半导体可饱和吸收镜(SESAM)更是具有波长可调、恢复时间和调制深度等参数可以控制的优点，其实现的调Q脉冲宽度最短，是未来固体激光器被动调Q的希望。而半导体可饱和吸收体材料组份、结构复杂，存在多种线性、非线性吸收机制，因此其调Q性能的优化设计非常重要。本项目拟利用分子模拟方法研究其调Q微观机理及性能指标的变化规律，掌握在材料制作过程中控制其非线性损耗、线性损耗、恢复时间和调制深度等调Q参数的方法；通过速率方程理论优化半导体可饱和吸收体和SESAM被动调Q激光器的关键性能参数，获取其调Q效果达到最佳时的性能参数；模拟材料的组份、结构、缺陷及其生长条件，通过分子设计探索新半导体材料的开发途径，为调Q性能最佳的半导体可饱和吸收体和SESAM新材料的开发设计提供规律性依据，填补国内外研究的空白。
结论摘要：
英文主题词Semiconductor saturable absorber;semiconductor saturable-absorber mirror (SESAM); Passively Q-switched;Molecular simulation; Molecular design
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期刊论文
Diode-pumped doubly Q-switched mode-locked YVO(4)/Nd:YVO(4)/KTP green laser with AO and GaAs saturab
Diode-pumped doubly passively Q-switched Nd:GdVO(4) 1.34 mu m laser with V(3)+:YAG and Co:LMA satura
Diode-pumped passively Q-switched and mode-locked Nd:Lu(0.15)Y(0.85)VO(4) laser with a GaAs saturabl
Optimization of the passively Q-switched laser with a novel central semiconductor saturable absorpti
Characteristics of diode-pumped dual-loss-modulated Q-switched and mode-locked Nd:Lu(0.15)Y(0.85)VO(
Theoretical and experimental study of a diode-pumped doubly Q-switched Nd:GdVO(4) 1.34 mu m laser wi
First principle study of the elastic properties of InGaAs with different doping concentrations of in
532 nm diode-pumped doubly Q-switched Nd:YVO(4)/KTP laser with electro-optic modulator and GaAs satu
Diode-pumped doubly Q-switched mode-locked YVO(4)/Nd YVO(4) laser with AO and GaAs saturable absorbe
Effect of Divalent Cationic Ions on the Adsorption Behavior of Zwitterionic Surfactant at Silica/Sol
Pulse width compression in a diode-pumped doubly Q-switched YVO4/Nd:YVO4/KTP green laser with EO and
Pulse-width reduction in a diode-pumped doubly Q-switched YVO4/Nd:YVO4 laser with electro-optic modu
Pulse compression in an electro-optic Q-switched diode-pumped YVO4/Nd:YVO4 laser with a Cr4+:YAG sat
Diode-pumped doubly passively Q-switched Nd:LuVO4 laser with Cr4+:YAG saturable absorber and GaAs ou
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