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Surface damage versus defect microstructures in He and H ion co-implanted Si3N4/Si
  • 所属机构名称：天津大学
  • 会议名称：16th International Conference on Radiation Effects in Insulators
  • 成果类型：会议
  • 相关项目：He和H离子注入Si基材料引起的表面剥离及机理研究
作者： Fei Zhu|Changlong Liu|Yujie Gao|Zhuo Wang|Jun Wang|
同会议论文项目
He和H离子注入Si基材料引起的表面剥离及机理研究
期刊论文 12 会议论文 7
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