Multilevel storage characteristics in ZrO2-ReRAM brought about by ideal current limiter
- 所属机构名称:中国科学院微电子研究所
- 会议名称:2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
- 成果类型:会议
- 相关项目:纳米加工与新型半导体器件研究
作者:
Lian, Wen-Tai|Liu, Ming|Long, Shi-Bing|Lv, Hang-Bing|Liu, Qi|Li, Ying-Tao|Wang, Yan|Zhang, Sen|Dai, Yue-Hua|Chen, Jun-Ning|