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Epitaxial growth of silicon films on SiO2 patterned Si (100) substrates by APCVD
  • 所属机构名称：中山大学
  • 成果类型：会议
  • 相关项目：RTCVD结合SLS技术在SiO2隔离层上高速制备大晶粒多晶硅薄膜研究
同会议论文项目
RTCVD结合SLS技术在SiO2隔离层上高速制备大晶粒多晶硅薄膜研究
期刊论文 18 会议论文 6
同项目会议论文
Selected Crystallization of Different Thickness Amorphous Silicon by 248nm Wavelength Excimer Laser
Observation on Defects in Poly-Si Films Prepared by RTCVD under Nonideal Conditions
Study on the Laser Crystallization of Amorphous Silicon Thin Films with a 355nm Pulsed YAG Nanosecon
APCVD deposition of Si Film on SiO2 patterned Si (111) substrates for solar cells
Selected crystallization of amorphous Si by 248nm wavelength excimer laser