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Selected Crystallization of Different Thickness Amorphous Silicon by 248nm Wavelength Excimer Laser
  • 所属机构名称：中山大学
  • 成果类型：会议
  • 相关项目：RTCVD结合SLS技术在SiO2隔离层上高速制备大晶粒多晶硅薄膜研究
同会议论文项目
RTCVD结合SLS技术在SiO2隔离层上高速制备大晶粒多晶硅薄膜研究
期刊论文 18 会议论文 6
同项目会议论文
Observation on Defects in Poly-Si Films Prepared by RTCVD under Nonideal Conditions
Study on the Laser Crystallization of Amorphous Silicon Thin Films with a 355nm Pulsed YAG Nanosecon
APCVD deposition of Si Film on SiO2 patterned Si (111) substrates for solar cells
Epitaxial growth of silicon films on SiO2 patterned Si (100) substrates by APCVD
Selected crystallization of amorphous Si by 248nm wavelength excimer laser