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High temperature physical modeling and verification of 4H-SiC lateral JFET device
  • 所属机构名称：浙江大学
  • 会议名称：2011 2nd International Conference on Artificial Intelligence, Management Science and Electronic Comm
  • 时间：2011
  • 成果类型：会议
  • 相关项目：基于硅基一维纳米线的Gate-all-around纳米晶体管的研究
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基于硅基一维纳米线的Gate-all-around纳米晶体管的研究
期刊论文 25 会议论文 6
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