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Parameters evaluation for SiC-JFET modeling considering non-uniformity by fabrication
  • 所属机构名称：浙江大学
  • 会议名称：21st IEEE International Symposium on Industrial Electronics, ISIE 2012
  • 时间：2012
  • 成果类型：会议
  • 相关项目：基于硅基一维纳米线的Gate-all-around纳米晶体管的研究
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基于硅基一维纳米线的Gate-all-around纳米晶体管的研究
期刊论文 25 会议论文 6
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