位置：成果数据库 > 会议 > 会议详情页
Resistive switching characteristics of hafnium oxide with Cu doping for nonvolatile memory applicati
  • 所属机构名称：中国科学院微电子研究所
  • 成果类型：会议
  • 相关项目：基于射频单电子晶体管的微纳机械器件研究
同会议论文项目
基于射频单电子晶体管的微纳机械器件研究
期刊论文 24 会议论文 11 著作 1
同项目会议论文
Resistance switching characteristics of zirconium oxide containing gold nanocrystals for nonvolatile
Nanocrystal Non-Volatile Memories: Simulation, Fabrication and Characteristics
Performance Improvement of Metal Nanocrystal Memory with High-κ Tunneling Dielectric
Impact of control dielectric layer on nanocrystals floating gate memory device
Excellent Resistive Switching Characteristics of Cu doped ZrO2 and its 64 bit Cross-point Integratio
A?hybrid?method?for?novel?nonvolatile?memory
A Hybrid Method For Fabrication of Au Nanocrystals Nonvolatile Memory
Fabrication and characterization of single electron transistor on SOI
Nonvolatile resistive switching characteristics of HfO2 with Cu doping
Analysis of Charge Retention Characteristics for Metal and Semiconductor Nanocrystal Non-volatile Me