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3-D Geant4 Simulation of Deep Sub-Micron SOI SRAM Irradiated by Proton
  • 所属机构名称：中国科学院微电子研究所
  • 会议名称：2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology (ICSICT 201
  • 时间：2014.10.28
  • 成果类型：会议
  • 相关项目：面向空间应用深亚微米SOI集成器件辐照损伤机理研究
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面向空间应用深亚微米SOI集成器件辐照损伤机理研究
期刊论文 18 会议论文 18
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