为了解决传统VCE在检测大功率绝缘栅双极型晶体管(IGBT)模块的短路故障时存在的问题,在分析了IGBT短路特性的基础上,提出了一种基于两级电流变化率(di/dt)检测IGBT两类短路故障的策略。该策略可以使驱动器更早地采取保护措施,限制IGBT的短路电流和短路功耗,减小关断尖峰电压。基于3300 V/1200 A IGBT模块的短路实验结果证明了该策略的有效性和可行性。
In order to solve the existing problems of the traditional VCEin detecting the short- circuit fault of high power IGBT module, on the basis of analyzing IGBT short- circuit characteristic, a strategy based on two levels di / dt for detecting IGBT two types short- circuit fault is proposed in this paper. It enables the driver to take protective measures much earlier with limiting IGBT short circuit current and short circuit power consumption, reducing spike voltage. The results of short- circuit experiment based on 3300V / 1200A IGBT module prove that the strategy proposed is effective and feasible.