中文摘要：

采取从某一温度（600-1000℃）开始缓慢升温至高温（1150℃）并保温若干时间的方法，使得直拉si片中大于起始温度对应的氧沉淀临界尺寸的那一部分原生氧沉淀得以长大，然后通过傅里叶红外光谱测量氧浓度变化以及利用扫描红外显微术测量氧沉淀密度．通过这样的方法，定性地研究了300mm掺N直拉si片的原生氧沉淀的径向分布．研究表明：氧沉淀异常区域（称为P区）的原生氧沉淀密度显著高于空位型缺陷区域（称为V区）；此外，V区中的原生氧沉淀的尺寸分布是不连续的，表现为高温下形成的大尺寸原生氧沉淀和低温下形成的小尺寸氧沉淀，而P区中的原生氧沉淀的尺寸分布则是连续的．我们从直拉Si晶体生长过程中原生氧沉淀的形成机制出发，对上述结果做了定性的解释．

英文摘要：

A ramping anneal,i, e. ,the isothermal anneal at an elevated temperature of 1150℃ ramped up from a starting temperature （600-1000℃） was employed to enable the growth of the grown-in oxygen precipitates that are larger than the critical size at the starting temperature. Flourier transformation infrared spectroscopy and scanning infrared microscopy are used to measure the amount of precipitated oxygen and the oxygen precipitate density in a 300mm nitrogen-doped Czochralski silicon wafer, respectively. The grown-in oxygen precipitate density in the abnormal oxygen precipitation region （generally referred to as the P-region） is much higher than that in the vacancy-type defect region （generally referred to as the V-region）. Moreover, the size distribution of grown-in ox- ygen precipitates in the V-region is not continuous, exhibiting large precipitates formed at high temperatures and small ones formed at low temperatures;while the grown-in oxygen precipitates in the P-region are continuously formed from high to low temperatures, thus leading to a continuous size distribution. Such results are tentatively explained in terms of the formation mechanisms for grownin oxygen precipitates generated in the V- and P-regions.