中文摘要：

研究了普通直拉（CZ）硅单晶和掺氮直拉（NCZ）硅单晶在氩气氛下进行1250℃/50s的快速热处理（RTP）后,再经600～1000℃的不同温区内的缓慢升温处理和1000℃保温处理后的氧沉淀行为.研究表明,由RTP引入的空位在700～800℃间缓慢升温退火时对CZ硅中氧沉淀形核的促进作用最显著,而在800～900℃间缓慢升温退火时对NCZ硅中氧沉淀形核的促进作用最显著;在800℃以上,氮促进氧沉淀形核的作用比空位更强.此外,提出了适用于CZ和NCZ硅片的基于高温RTP和低温缓慢升温热处理的内吸杂工艺.

英文摘要：

The oxygen precipitation behaviors in conventional and nitrogen-doped Czochralski （NCZ） silicon subjected to the rapid thermal processing （RTP） at 1250℃ for 50s followed by the ramping anneal in different temperature intervals in the range from 600 to 1000℃ and isothermal annealing at 1000℃ are investigated, The results show that the RTP-induced vacancies enhance the nuclea- tion of oxygen precipitates most significantly during the ramping anneal from 700 to 800℃ for conventional CZ silicon. Meanwhile, for NCZ silicon, the most significant vacancy-enhancement of nucleation of oxygen precipitates occurs during the ramping anneal from 800 to 900℃. Nitrogen is superior to vacancy for enhancement of oxygen precipitate nucleation at temperatures higher than 800℃. Furthermore, the internal gettering processes appropriate for CZ and NCZ silicon wafers based on the RTP and ramping anneal in the low temperature range are proposed.