Enhancing light extraction of GaN-based blue light-emitting diodes by a tuned nanopillar arrayEnhancing light extraction of GaN-based blue light-emitting diodes by a tuned nanopillar array
- ISSN号:1674-1056
- 期刊名称:《中国物理B:英文版》
- 时间:0
- 分类:O[理学]
- 作者机构:[1]State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Y'at-sen University, Guangzhou 510275, China, [2]School of Electronic and Information, Guangdong Polytechnic Normal University, Guangzhou 510665, China
- 相关基金:Project supported by the National Natural Science Foundation of China (Grant Nos. 10774195, U0834001, 10974263, 11174374, and 10725420), the Key Program of Ministry of Education, China (Grant No. 309024), the Program for New Century Excellent Talents in University of Ministry of Education of China, and the National Basic Research Program of China (Grant No. 2010CB923200).
中文摘要:
Surface patterning of p-GaN to improve the light extraction efficiency of GaN-based blue light-emitting diodes (LEDs) has been investigated. Periodic nanopillar arrays on p-GaN have been fabricated by polystyrene (PS) nanosphere lithog- raphy; the diameter of the nanopillars can be tuned to optimize the electrical and optical properties of the LEDs. The electroluminescence intensity of the nanopillar-patterned LEDs is better than that of conventional LEDs; the greatest en- hancement increased the intensity by a factor of 1.41 at a 20 mA injection current. The enhancements can be explained by a model of bilayer film on a GaN substrate. This method may serve as a practical approach to improve the efficiency of light extraction from LEDs.