中文摘要：

组III氮化物材料系统拥有一些唯一的性质，例如大光谱范围从对深紫外的、宽精力乐队差距，高电子浸透速度，高电的故障领域，和强壮的极化效果红外线，它启用大家庭让一个很宽的应用程序从 optoelectronic 到力量电子区域。而且，大尺寸硅底层上的陷阱相关的 III 氮化物材料的成功的生长容易启用上述应用认识到商品化，因为基于 Si 的集成电路的站台上的划算的设备制造。在这篇文章，在 Si 底层上种的基于陷阱的材料和轻射出的二极管的进步和发展被总结，在哪个考虑到材料生长的一些关键问题和设备制造被考察。

英文摘要：

Group III-nitride material system possesses some unique properties, such as large spectrum coverage from infrared to deep ultraviolet, wide energy band gap, high electron saturation velocity, high electrical breakdown field, and strong polarization effect, which enables the big family has a very wide application range from optoelectronic to power electronic area. Furthermore, the successful growth of GaN-related III-nitride material on large size silicon substrate enable the above applications easily realize the commercialization, because of the cost-effective device fabrication on the platform of Si-based integrated circuits. In this article, the progress and development of the GaN-based materials and light-emitting diodes grown on Si substrate were summarized, in which some key issues regarding to the material growth and device fabrication were reviewed.